| PART |
Description |
Maker |
| MDB6S MDB10S MDB8S |
1A, 600V, MicroDIP, Single-Phase Bridge Rectifier
1A, 1000V, MicroDIP, Single-Phase Bridge Rectifier
1A, 800V, MicroDIP, Single-Phase Bridge Rectifier
|
Fairchild Semiconductor
|
| IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
| IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| OM11N60SA OM11N55 OM11N55SA OM11N60 OM11N60A OM11N |
600V Single N-Channel Hi-Rel MOSFET in a D3 package
600V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED
|
International Rectifier
ETC[ETC]
List of Unclassifed Manufacturers
|
| IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
| PHMB600A6 NIHONINTERELECTRONICSCORP-PHMB600A6 |
IGBT MODULE Single 600A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| IRG4RC20FTR IRG4RC20FTRL IRG4RC20FTRR |
600V Fast 1-8 kHz Single IGBT in a D-Pak package
|
International Rectifier
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRFBC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| ISL9K460P3 |
4A, 600V StealthDual Diode 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
4A, 600V Stealth⑩ Dual Diode
4A, 600V Stealth Dual Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
